| PART |
Description |
Maker |
| ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
| PE7036-1 |
0 to 42 dB Toggle Step Attenuator, BNC Female To BNC Female With 0.5 dB Step Rated To 1 Watt Up To 1 GHz
|
Pasternack Enterprises, Inc.
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| AT-267 AT-267SMB AT-267TR AT-267TR-3 |
Digital Attenuator 1 Bit 15 dB Step DC - 2.0 GHz
|
MACOM[Tyco Electronics]
|
| MAATSS0018TR MAATSS0018 |
Digital Attenuator, 1-Bit, 10 dB Step DC - 2.0 GHz
|
M/A-COM Technology Solutions, Inc.
|
| PE43705 PE43705A-Z |
RF Digital Step Attenuator, 7-bit, 31.75 dB 50 MHz ?8 GHz
|
Peregrine Semiconductor
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 5082-0810 50820810 |
SILICON STEP RECOVERY DIODE S BAND, SILICON, STEP RECOVERY DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| FR601 FR607 FR606 |
FAST RECOVER RECTIFIER
|
Shenzhen Ping Sheng Electronics Co., Ltd.
|
| 3F40P |
FAST RECOVER DIODE
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 10F40S3 |
FAST RECOVER DIODE
|
JILIN SINO-MICROELECTRO...
|
